KTC3879 [BL Galaxy Electrical]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | KTC3879 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3879
FEATURES
Pb
Lead-free
z
High power gain.
APPLICATIONS
z
High frequency application.
z
HF,VHF band amplifier appilication.
SOT-23
ORDERING INFORMATION
Type No.
KTC3879
Marking
Package Code
SOT-23
RR/RO/RY
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
35
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
30
V
4
V
Collector Current
50
mA
mA
mW
℃
Emitter Current
IE
-50
150
-55~150
Collector Power Dissipation
Junction and Storage Temperature
PC
Tj,Tstg
Document number: BL/SSSTC110
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3879
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=100μA,IE=0
35
V
V
V
V(BR)CEO
V(BR)EBO
IC=100μA,IB=0
IE=100μA,IC=0
30
4
ICBO
VCB=35V,IE=0
VEB=4V,IC=0
0.1
μA
μA
Emitter cut-off current
IEBO
1.0
240
0.4
DC current gain
hFE
VCE=12V,IC=2mA
IC=10mA, IB=1mA
40
Collector-emitter saturation voltage
VCE(sat)
V
V
Base-emitter saturation voltage
IC=10mA, IB=1mA
VBE(sat)
1.0
Transition frequency
VCE=10V, IC= 1mA
fT
100
1.4
400
3.2
MHz
pF
Collector output capacitance
VCB=10V,IE=0,f=1MHz
Cob
2.0
CLASSIFICATION OF hFE
Rank
Range
Marking
R
O
Y
40-80
RR
70-140
RO
120-240
RY
Document number: BL/SSSTC110
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3879
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC110
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3879
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
K
B
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
G
H
J
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
KTC3879
3000/Tape&Reel
Document number: BL/SSSTC110
Rev.A
www.galaxycn.com
4
相关型号：
KTC3880
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER)
KEC
©2020 ICPDF网 联系我们和版权申明